Resolving the Heat Generated from ZrO₂ Atomic Layer Deposition Surface Reactions

A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface

Zirconium oxide (ZrO2) is one of the leading candidates to replace silicon oxide (SiO2) as the gate dielectric for future generation metal-oxide-semiconductor (MOS) based nanoelectronic devices. Experimental studies have shown that a 1–3 monolayer SiO2 film between the high permittivity metal oxide and the substrate silicon is needed to minimize electrical degradation. This study uses density f...

ceramic surface modification of textiles by atomic layer deposition

24 Nanoscale ceramic surface modification of textiles by atomic layer deposition R ecent opportunities to merge traditional inorganic materials processing with organic fibrous textiles are creating new possibilities in electrical, optical and mechanical applications for textiles. Textiles are made of low-cost natural or synthetic fibers and have unique flexibility, strength and durability with ...

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

Atomic layer deposition was employed to deposit relatively thick ( 30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide. Ex situ surface conditioning by a simple wet chemistry treatment was used to render the otherwise chemically inert graphene surface more amenable to dielectric deposition. The...

Atomic layer deposition: an overview.

Atomic Layer Deposition of TiO

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